Title :
Improvement of catastrophic optical damage (COD) level for high-power 0.98-μm GaInAs-GaInP laser
Author :
Lee, Jung Keun ; Park, K.H. ; Jang, D.H. ; Cho, H.S. ; Park, C.S. ; Pyun, K.E. ; Jeong, J.
Author_Institution :
Compound Semicond. Res. Dept., Electron. & Telecommun. Res. Inst., Yusong, South Korea
Abstract :
We investigate improvement of catastrophic optical damage (COD) level for Al-free 0.98-μm ridge waveguide laser diodes (LDs) using the impurity induced layer disordering (IILD) process applied near the facets. The IILD is used for the purpose of forming transparent windows near both facets of the LDs utilizing its ability to increase bandgap energy of the GaInAs-GaInAsP strained quantum-well (QW) active layer. Improvement of the cod level by at least 1.65 times compared to the conventional LDs is obtained for the LDs with Si/sup +/ implantation followed by annealing at 900/spl deg/C for 10 min.
Keywords :
III-V semiconductors; energy gap; gallium arsenide; gallium compounds; indium compounds; infrared sources; laser beam effects; laser transitions; quantum well lasers; ridge waveguides; waveguide lasers; 10 min; 900 C; GaInAs-GaInAsP strained quantum-well active layer; GaInAs-GaInP; Si/sup +/ implantation; bandgap energy; catastrophic optical damage level; high-power 0.98-/spl mu/m GaInAs-GaInP laser; impurity induced layer disordering process; ridge waveguide laser diodes; transparent windows; Annealing; Diode lasers; Impurities; Optical pumping; Optical waveguides; Photonic band gap; Power generation; Pump lasers; Quantum well lasers; Stimulated emission;
Journal_Title :
Photonics Technology Letters, IEEE
