Improvement of catastrophic optical damage (COD) level for high-power 0.98-μm GaInAs-GaInP laser

Author

Lee, Jung Keun ; Park, K.H. ; Jang, D.H. ; Cho, H.S. ; Park, C.S. ; Pyun, K.E. ; Jeong, J.

Author_Institution

Compound Semicond. Res. Dept., Electron. & Telecommun. Res. Inst., Yusong, South Korea

Volume

10

Issue

9

fYear

1998

Firstpage

1226

Lastpage

1228

Abstract

We investigate improvement of catastrophic optical damage (COD) level for Al-free 0.98-μm ridge waveguide laser diodes (LDs) using the impurity induced layer disordering (IILD) process applied near the facets. The IILD is used for the purpose of forming transparent windows near both facets of the LDs utilizing its ability to increase bandgap energy of the GaInAs-GaInAsP strained quantum-well (QW) active layer. Improvement of the cod level by at least 1.65 times compared to the conventional LDs is obtained for the LDs with Si/sup +/ implantation followed by annealing at 900/spl deg/C for 10 min.

Keywords

III-V semiconductors; energy gap; gallium arsenide; gallium compounds; indium compounds; infrared sources; laser beam effects; laser transitions; quantum well lasers; ridge waveguides; waveguide lasers; 10 min; 900 C; GaInAs-GaInAsP strained quantum-well active layer; GaInAs-GaInP; Si/sup +/ implantation; bandgap energy; catastrophic optical damage level; high-power 0.98-/spl mu/m GaInAs-GaInP laser; impurity induced layer disordering process; ridge waveguide laser diodes; transparent windows; Annealing; Diode lasers; Impurities; Optical pumping; Optical waveguides; Photonic band gap; Power generation; Pump lasers; Quantum well lasers; Stimulated emission;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.705598

Filename

705598