Ridge laser with spot-size converter in a single epitaxial step for high coupling efficiency to single-mode fibers

Author

Bissessur, H. ; Graver, C. ; Le Gouezigou, O. ; Michaud, G. ; Gaborit, F.

Author_Institution

Alcatel Alsthom Recherche, Marcoussis, France

Volume

10

Issue

9

fYear

1998

Firstpage

1235

Lastpage

1237

Abstract

We report on a 1.55-μm InGaAsP MQW laser diode with an integrated spot-size converter fabricated in a single epitaxial step using conventional photolithography. The laser structure uses a conventional ridge guide for the active layers and a second larger ridge for the passive waveguide. Low-beam divergence of typically 9/spl deg/×9/spl deg/ results in about 3-dB coupling losses, with a cleaved optical fiber.

Keywords

III-V semiconductors; epitaxial growth; gallium arsenide; gallium compounds; indium compounds; laser beams; optical losses; photolithography; quantum well lasers; ridge waveguides; semiconductor growth; waveguide lasers; 1.55 mum; 1.55-/spl mu/m InGaAsP MQW laser diode; 3 dB; InGaAsP; active layers; cleaved optical fiber; dB coupling losses; high coupling efficiency; integrated spot-size converter; laser structure; ow-beam divergence; passive waveguide; photolithography; ridge guide; ridge laser; ridge waveguide lasers; single epitaxial step; single-mode fiber coupling; spot-size converter; Fiber lasers; Laser modes; Lithography; Optical coupling; Optical fiber losses; Optical fibers; Optical waveguides; Quantum well devices; Semiconductor lasers; Waveguide lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.705601

Filename

705601