Detailed theoretical investigation of the input power dynamic range for gain-clamped semiconductor optical amplifier gates at 10 Gb/s

Author

Wolfson, D. ; Danielsen, S.L. ; Joergensen, C. ; Mikkelsen, B. ; Stubkjaer, K.E.

Author_Institution

Center for Broadband Telecommun., Tech. Univ., Lyngby, Denmark

Volume

10

Issue

9

fYear

1998

Firstpage

1241

Lastpage

1243

Abstract

A detailed theoretical investigation of the input power dynamic range for gain-clamped semiconductor optical amplifier (GC-SOA) gates at 10 Gb/s is presented. We show that although the gain is clamped, the dynamic changes of the carrier distribution in the GC-SOA causes pattern effects on a time scale given by the relaxation frequency of the GC-SOA. Combined with a higher noise figure compared to a conventional SOA, this results in a dynamic range only /spl sim/0.5 dB better than for an optimized SOA gate.

Keywords

electro-optical switches; laser noise; laser theory; photonic switching systems; semiconductor device models; semiconductor device noise; semiconductor lasers; 10 Gbit/s; GC-SOA; carrier distribution; dynamic change; dynamic range; gain-clamped semiconductor optical amplifier gates; higher noise figure; input power dynamic range; optimized SOA gate; pattern effects; relaxation frequency; theoretical investigation; time scale; Distributed Bragg reflectors; Dynamic range; Noise figure; Optical crosstalk; Optical distortion; Optical noise; Optical saturation; Optical switches; Semiconductor optical amplifiers; Stimulated emission;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.705603

Filename

705603