Title :
Narrow-band photoreceiver OEIC on InP operating at 38 GHz
Author :
Engel, T. ; Strittmatter, A. ; Passenberg, W. ; Umbach, A. ; Schlaak, W. ; Droge, E. ; Seeger, A. ; Steingruber, R. ; Mekonnen, G.C. ; Unterborsch, G. ; Bach, H.-G. ; Bottcher, E.H. ; Bimberg, D.
Author_Institution :
Heinrich-Hertz-Inst. fur Nachrichtentech. Berlin GmbH, Germany
Abstract :
We report on the successful monolithic integration of an InP-based photoreceiver operating in the narrow band around 38 GHz at a wavelength of 1.55 μm, The optoelectronic integrated circuit (OEIC) incorporates two types of high-speed devices, a submicrometer metal-semiconductor-metal photodetector (MSM PD) made of InGaAs-InP and quarter-micrometer high-electron-mobility-transistors (HEMTs) based on a lattice-matched InGaAs-InAlAs-InP layer stack. For this purpose a fabrication process requiring only twelve main steps including a metal-organic chemical vapor deposition growth for the MSM PD layers and a MBE regrowth for the HEMT layers has been developed. At 38 GHz, a responsivity of 3.5 A/W for the OEIC is achieved.
Keywords :
HEMT integrated circuits; III-V semiconductors; indium compounds; integrated optoelectronics; metal-semiconductor-metal structures; optical receivers; photodetectors; vapour phase epitaxial growth; 1.55 micron; 38 GHz; HEMT; InGaAs-InAlAs-InP; InGaAs-InP; MBE regrowth; MOCVD growth; chemical vapor deposition; fabrication process; high-electron-mobility-transistors; high-speed devices; lattice-matched InGaAs-InAlAs-InP layer stack; metal-organic CVD; metal-semiconductor-metal photodetector; monolithic integration; narrow-band photoreceiver OEIC; optoelectronic integrated circuit; submicron MSM photodetector; Chemical vapor deposition; HEMTs; High speed integrated circuits; Indium phosphide; MODFETs; Monolithic integrated circuits; Narrowband; Optical device fabrication; Optoelectronic devices; Photodetectors;
Journal_Title :
Photonics Technology Letters, IEEE
