• DocumentCode
    14107
  • Title

    Effects of Dislocation Walls on Image Quality When Using Cadmium Telluride X-Ray Detectors

  • Author

    Buis, C. ; Marrakchi, G. ; Lafford, T.A. ; Brambilla, Angelo ; Verger, Loick ; Gros d´Aillon, Eric

  • Author_Institution
    Leti, CEA, Grenoble, France
  • Volume
    60
  • Issue
    1
  • fYear
    2013
  • fDate
    Feb. 2013
  • Firstpage
    199
  • Lastpage
    203
  • Abstract
    Microstructural defects in chlorine-doped cadmium telluride crystals (CdTe:Cl) can affect performance of CdTe-based radiation detectors. To study this, we produced a CdTe-based X-ray detector operating in integration mode. Its response under irradiation shows that sensitivity is non-uniform, dark-current maps were also observed. These indicate that charge carrier transport is heterogeneous. Advanced characterization tools, such as Infrared (IR) transmission and reflection microscopy and diffraction topography, were used for bulk and surface investigations. A clear correlation was established between the distribution of linear defects, such as dislocations and sub-grain-boundaries, and the localization of zones of non-uniform dark-current and photo-current in the sample.
  • Keywords
    II-VI semiconductors; X-ray apparatus; cadmium compounds; chlorine; dark conductivity; dislocations; grain boundaries; semiconductor counters; CdTe based radiation detectors; CdTe:Cl; cadmium telluride X-ray detectors; chlorine doped cadmium telluride crystals; dark current maps; diffraction topography; dislocation wall effects; dislocations; heterogeneous charge carrier transport; image quality; infrared reflection microscopy; infrared transmission microscopy; integration mode; irradiation response; linear defect distribution; microstructural defects; nonuniform sensitivity; subgrain boundaries; Correlation; Crystals; Detectors; Microscopy; Sensitivity; Surface topography; CdTe:Cl; X-ray detector; characterization; dislocation; etching; integration mode; topography;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2012.2232306
  • Filename
    6413251