Title :
Electronic properties of partially crystalline SiOx suboxide films
Author :
Wilk, G.D. ; Brar, B.
Author_Institution :
Lucent Technol. Bell Labs., Murray Hill, NJ, USA
Abstract :
Partially crystalline, silicon suboxide (SiO/sub x/, 0\n\n\t\t
Keywords :
etching; insulating thin films; oxidation; silicon compounds; 480 meV; Si; SiO; current transport; electronic properties; etching; oxidation; partially crystalline SiO/sub x/ suboxide films; substrate temperature; temperature-dependent current-voltage measurements; transmission electron microscopy; zero-bias activation energy; Crystallization; Electrons; Etching; Insulation; Kinetic theory; Oxidation; Semiconductor films; Silicon; Substrates; Temperature;
Journal_Title :
Electron Device Letters, IEEE
