• DocumentCode
    1411056
  • Title

    A novel self-aligned fabrication process for microwave static induction transistors in silicon carbide

  • Author

    Henning, J.P. ; Przadka, A. ; Melloch, M.R. ; Cooper, J.A., Jr.

  • Author_Institution
    OptoLynx Inc., West Lafayette, IN, USA
  • Volume
    21
  • Issue
    12
  • fYear
    2000
  • Firstpage
    578
  • Lastpage
    580
  • Abstract
    A novel multiple-self-aligned fabrication process is developed for recessed gate microwave static induction transistors (SITs) in silicon carbide (SiC). This process is demonstrated by fabricating 4H-SiC SITs having record f/sub T/ of 7 GHz.
  • Keywords
    microwave power transistors; silicon compounds; static induction transistors; wide band gap semiconductors; 4H-SiC; 7 GHz; Schottky gates; SiC; airbridged trench structure; microwave static induction transistors; multiple-self-aligned fabrication process; recessed gate; Annealing; Capacitance; Electron beams; Etching; Fabrication; Microwave devices; Microwave transistors; Nickel; Ohmic contacts; Silicon carbide;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/55.887471
  • Filename
    887471
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1411056