Title :
A novel self-aligned fabrication process for microwave static induction transistors in silicon carbide
Author :
Henning, J.P. ; Przadka, A. ; Melloch, M.R. ; Cooper, J.A., Jr.
Author_Institution :
OptoLynx Inc., West Lafayette, IN, USA
Abstract :
A novel multiple-self-aligned fabrication process is developed for recessed gate microwave static induction transistors (SITs) in silicon carbide (SiC). This process is demonstrated by fabricating 4H-SiC SITs having record f/sub T/ of 7 GHz.
Keywords :
microwave power transistors; silicon compounds; static induction transistors; wide band gap semiconductors; 4H-SiC; 7 GHz; Schottky gates; SiC; airbridged trench structure; microwave static induction transistors; multiple-self-aligned fabrication process; recessed gate; Annealing; Capacitance; Electron beams; Etching; Fabrication; Microwave devices; Microwave transistors; Nickel; Ohmic contacts; Silicon carbide;
Journal_Title :
Electron Device Letters, IEEE
