Performance enhancement of offset gated polysilicon thin-film transistors

Author

Dimitriadis, C.A. ; Miyasaka, M.

Author_Institution

Dept. of Phys., Thessaloniki Univ., Greece

Volume

21

Issue

12

fYear

2000

Firstpage

584

Lastpage

586

Abstract

Simple offset gated n-channel polysilicon thin film transistors (TFTs) of channel length L=10 μm were investigated in relation to the intrinsic offset length /spl Delta/L and the polysilicon quality. For /spl Delta/L/spl les/1 μm, the device parameters such as threshold voltage, subthreshold slope and field effect mobility are improved, while the leakage current remains unchanged. In TFTs with /spl Delta/L>1 μm, the leakage current decreases with increasing the offset length. When the polysilicon layer is of high quality (large grain size and low intra-grain defect density), the leakage current is completely suppressed without sacrificing the on-current in TFT´s with offset length of 2 μm.

Keywords

carrier mobility; elemental semiconductors; grain size; leakage currents; silicon; thin film transistors; Si; field effect mobility; grain size; intra-grain defect density; intrinsic offset length; leakage current; offset gated polysilicon TFT; polysilicon quality; subthreshold slope; thin-film transistors; threshold voltage; Aluminum; Annealing; Crystallization; Electrodes; Grain size; Leakage current; Semiconductor films; Solid lasers; Temperature; Thin film transistors;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.887473

Filename

887473