DocumentCode :
1411068
Title :
Performance enhancement of offset gated polysilicon thin-film transistors
Author :
Dimitriadis, C.A. ; Miyasaka, M.
Author_Institution :
Dept. of Phys., Thessaloniki Univ., Greece
Volume :
21
Issue :
12
fYear :
2000
Firstpage :
584
Lastpage :
586
Abstract :
Simple offset gated n-channel polysilicon thin film transistors (TFTs) of channel length L=10 μm were investigated in relation to the intrinsic offset length /spl Delta/L and the polysilicon quality. For /spl Delta/L/spl les/1 μm, the device parameters such as threshold voltage, subthreshold slope and field effect mobility are improved, while the leakage current remains unchanged. In TFTs with /spl Delta/L>1 μm, the leakage current decreases with increasing the offset length. When the polysilicon layer is of high quality (large grain size and low intra-grain defect density), the leakage current is completely suppressed without sacrificing the on-current in TFT´s with offset length of 2 μm.
Keywords :
carrier mobility; elemental semiconductors; grain size; leakage currents; silicon; thin film transistors; Si; field effect mobility; grain size; intra-grain defect density; intrinsic offset length; leakage current; offset gated polysilicon TFT; polysilicon quality; subthreshold slope; thin-film transistors; threshold voltage; Aluminum; Annealing; Crystallization; Electrodes; Grain size; Leakage current; Semiconductor films; Solid lasers; Temperature; Thin film transistors;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/55.887473
Filename :
887473
Link To Document :
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