Negative differential resistance of porous silicon

Author

Lee, Ming-Kwei ; Chu, Chi-Hsing ; Tseng, Yu-Chu ; Shyr, Jong-Min ; Kao, Chia-Hsiung

Author_Institution

Dept. of Electr. Eng., Nat. Sun Yat-Sen Univ., Kaohsiung, Taiwan

Volume

21

Issue

12

fYear

2000

Firstpage

587

Lastpage

589

Abstract

A porous silicon Al Schottky barrier diode shows differential negative resistance. The thin wires in porous silicon have much lower electron mobility than that of thick wires, due to electron surface scattering from space confinement. The energy of carriers in thick wires increases with applied bias. Some carriers can overcome the conduction-band discontinuity and flow into the thin wires. The negative differential resistance comes from the mobility difference between thick wires and thin wires in porous silicon.

Keywords

Schottky barriers; aluminium; electron mobility; elemental semiconductors; negative resistance; photodiodes; porous semiconductors; silicon; surface scattering; Al-Si; Schottky barrier diode; carrier energy; conduction-band discontinuity; electron mobility; electron surface scattering; negative differential resistance; photodiode; porous silicon; space confinement; thin wires; Dark current; Electron mobility; Lamps; Lighting; Photoconductivity; Schottky diodes; Silicon; Surface resistance; Tungsten; Wires;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.887474

Filename

887474