Title :
Anomalous nanosecond transient component in a GaAs MODFET technology
Author :
Kaneshiro, R.T. ; Kocot, C.P. ; Jaeger, R.P. ; Kofol, J.S. ; Lin, Barry J. F. ; Littau, Erwin ; Luechinger, Hermann ; Rohdin, Hans G.
Author_Institution :
Hewlett-Packard Lab., Palo Alto, CA, USA
fDate :
5/1/1988 12:00:00 AM
Abstract :
Modulation-doped field-effect transistors (MODFETs) exhibit transient responses that contain a variety of time constants. The strongest transients observed in the microsecond range are known to be caused by the DX centers. MODFETs also suffer a transient that arises from a source different from that of the DX centers. Preliminary measured characteristics of the nanosecond transient are presented, its effects on circuit performance are described, and its possible origin is inferred.<>
Keywords :
III-V semiconductors; gallium arsenide; high electron mobility transistors; semiconductor device testing; transient response; transients; DX centers; GaAs; MODFETs; circuit performance; nanosecond transient component; time constants; transient responses; Circuit testing; FETs; Gallium arsenide; HEMTs; Logic devices; Logic testing; MODFET circuits; Pulse measurements; Pulse width modulation inverters; Vehicles;
Journal_Title :
Electron Device Letters, IEEE
