Title :
Electrical properties of RuO2 gate electrodes for dual metal gate Si-CMOS
Author :
Zhong, Huicai ; Heuss, Greg ; Misra, Veena
Author_Institution :
Dept. of Electr. Eng., North Carolina State Univ., Raleigh, NC, USA
Abstract :
The rutile stoichiometric phase of RuO/sub 2/, deposited via reactive sputtering, was evaluated as a gate electrode for Si-PMOS devices. Thermal and chemical stability of the electrodes was studied at annealing temperatures of 400/spl deg/C and 600/spl deg/C in N/sub 2/. X-ray diffraction patterns were measured to study grain structure and interface reactions. Very low resistivity values were observed and were found to be a strong function of temperature. Electrical properties were evaluated on MOS capacitors, which indicated that the workfunction of RuO/sub 2/ was compatible with PMOS devices. Excellent stability of oxide thickness, flatband voltage and gate current as a function of temperature was also found. Breakdown fields were also measured for the samples before and after annealing.
Keywords :
CMOS integrated circuits; MOS capacitors; X-ray diffraction; annealing; crystal microstructure; dielectric thin films; electric breakdown; electrical resistivity; interface structure; ruthenium compounds; sputtered coatings; stoichiometry; thermal stability; work function; 400 C; 600 C; MOS capacitors; N/sub 2/; RuO/sub 2/; RuO/sub 2/ gate electrodes; Si; Si-PMOS devices; X-ray diffraction patterns; annealing temperatures; breakdown fields; chemical stability; dual metal gate Si-CMOS; electrical properties; flatband voltage; gate current; grain structure; interface reactions; low resistivity; reactive sputtering; rutile stoichiometric phase; thermal stability; work function; Annealing; Chemicals; Conductivity; Electrodes; MOS capacitors; MOS devices; Sputtering; Temperature; Thermal stability; X-ray diffraction;
Journal_Title :
Electron Device Letters, IEEE
