Hot carrier reliability improvement by utilizing phosphorus transient enhanced diffusion for input/output devices of deep submicron CMOS technology

Author

Wang, Tahui ; Diaz, Carlos H. ; Liew, Boon-Khim ; Sun, Jack Yuan-Chen ; Tahui Wang

Author_Institution

Device, Technol. & Modeling Dept., Taiwan Semicond. Manuf. Co., Hsinchu, Taiwan

Volume

21

Issue

12

fYear

2000

Firstpage

598

Lastpage

600

Abstract

This letter presents a deep submicron CMOS process that takes advantage of phosphorus transient enhanced diffusion (TED) to improve the hot carrier reliability of 3.3 V input/output transistors. Arsenic/phosphorus LDD nMOSFETs with and without TED are fabricated. The TED effects on a LDD junction profile, device substrate current and transconductance degradation are evaluated. Substantial substrate current reduction and hot carrier lifetime improvement for the input/output devices are attained due to a more graded n/sup -/ LDD doping profile by taking advantage of phosphorus TED.

Keywords

CMOS integrated circuits; MOSFET; arsenic; carrier lifetime; diffusion; doping profiles; elemental semiconductors; hot carriers; integrated circuit reliability; phosphorus; semiconductor device reliability; semiconductor doping; silicon; 3.3 V; LDD junction profile; Si:As,P; TED effects; arsenic/phosphorus LDD nMOSFETs; deep submicron CMOS process; deep submicron CMOS technology; device substrate current; graded n/sup -/ LDD doping profile; hot carrier lifetime; hot carrier reliability; input/output devices; input/output transistors; phosphorus transient enhanced diffusion; substrate current reduction; transconductance degradation; CMOS process; CMOS technology; Doping profiles; Hot carrier effects; Hot carriers; Implants; Research and development; Semiconductor device manufacture; Sun; Voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.887478

Filename

887478