Title :
On the high-frequency characteristics of substrate resistance in RF MOSFETs
Author :
Yuhua Cheng ; Matloubian, M.
Author_Institution :
Conexant Syst., Newport Beach, CA, USA
Abstract :
The high-frequency (HF) behavior of substrate components in MOSFETs is studied at different bias conditions for a 0.35 μm BICMOS technology in the frequency range up to 10 GHz. It was found that the observed strong bias dependence of the real part of admittance y/sub 22/, Re{y/sub 22/}, is mainly contributed by the channel conductance. A very weak bias dependence of substrate resistance was found after deembedding the measured y/sub 22/ to remove the influence of channel resistance R/sub ds/ and gate-to-drain capacitance C/sub gd/. The results are key to the understanding and modeling of the HF behavior of MOSFET substrate components for RF IC design.
Keywords :
BiCMOS integrated circuits; MOSFET; capacitance; electric admittance; electrical resistivity; microwave field effect transistors; semiconductor device measurement; 0.35 mum; 10 GHz; BICMOS technology; RF MOSFETs; admittance; bias conditions; bias dependence; channel conductance; channel resistance; gate-drain capacitance; high-frequency characteristics; substrate resistance; BiCMOS integrated circuits; Capacitance measurement; Electrical resistance measurement; Equivalent circuits; Frequency measurement; Hafnium; Integrated circuit modeling; MOSFETs; Radio frequency; Semiconductor device modeling;
Journal_Title :
Electron Device Letters, IEEE
