DocumentCode
1411500
Title
70-90 GHz balanced resistive PHFET mixer MMIC
Author
Schaper, U. ; Schafer, A. ; Werthof, A. ; Siweris, H.J. ; Tischer, H. ; Klapproth, L. ; Bock, G. ; Kellner, W.
Author_Institution
Corp. Technol., Siemens AG, Munich, Germany
Volume
34
Issue
14
fYear
1998
fDate
7/9/1998 12:00:00 AM
Firstpage
1377
Lastpage
1379
Abstract
A balanced resistive GaAs high electron mobility transistor mixer monolithic microwave integrated circuit has been designed and fabricated in a production oriented technology. The design is based on a specialised large signal model for linear transistor operation. The conversion loss was 8-10 dB for 70-90 GHz and the noise figure at 100 kHz was 31 dB, which is 11 dB lower than that obtained with diode mixers
Keywords
HEMT integrated circuits; III-V semiconductors; MMIC mixers; field effect MIMIC; gallium arsenide; integrated circuit modelling; integrated circuit noise; losses; millimetre wave mixers; 31 dB; 70 to 90 GHz; 8 to 10 dB; GaAs; MMIC; balanced resistive PHFET mixer; conversion loss; large signal model; linear transistor operation; mm-wave mixers; noise figure; production oriented technology;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19981007
Filename
706078
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