Title :
70-90 GHz balanced resistive PHFET mixer MMIC
Author :
Schaper, U. ; Schafer, A. ; Werthof, A. ; Siweris, H.J. ; Tischer, H. ; Klapproth, L. ; Bock, G. ; Kellner, W.
Author_Institution :
Corp. Technol., Siemens AG, Munich, Germany
fDate :
7/9/1998 12:00:00 AM
Abstract :
A balanced resistive GaAs high electron mobility transistor mixer monolithic microwave integrated circuit has been designed and fabricated in a production oriented technology. The design is based on a specialised large signal model for linear transistor operation. The conversion loss was 8-10 dB for 70-90 GHz and the noise figure at 100 kHz was 31 dB, which is 11 dB lower than that obtained with diode mixers
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC mixers; field effect MIMIC; gallium arsenide; integrated circuit modelling; integrated circuit noise; losses; millimetre wave mixers; 31 dB; 70 to 90 GHz; 8 to 10 dB; GaAs; MMIC; balanced resistive PHFET mixer; conversion loss; large signal model; linear transistor operation; mm-wave mixers; noise figure; production oriented technology;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19981007
