Title :
Continuous-wave operation of singlemode GaInAsSb lasers emitting near 2.2 μm at Peltier temperatures
Author :
Popov, A.A. ; Sherstnev, V.V. ; Baranov, A.N. ; Alibert, C. ; Yakovlev, Yu.P.
Author_Institution :
A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg, Russia
fDate :
7/9/1998 12:00:00 AM
Abstract :
A continuous-wave regime, lasing near 2.2 μm, has been achieved for single longitudinal mode GaInAsSb double heterostructure lasers mounted on a Peltier cooler. In the pulsed regime the lasers exhibited a characteristic temperature of the threshold current as high as 132 K at heatsink temperatures up to 60°C
Keywords :
III-V semiconductors; Peltier effect; cooling; gallium arsenide; gallium compounds; indium compounds; laser modes; laser transitions; semiconductor lasers; 132 K; 2.2 micron; 60 C; CW operation; GaInAsSb-GaAlAsSb; Peltier cooler; Peltier temperatures; characteristic temperature; continuous-wave regime; double heterostructure lasers; heatsink temperatures; pulsed regime; single longitudinal mode; singlemode GaInAsSb lasers; threshold current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19980982
