90/spl deg/C continuous-wave operation of 1.83-μm vertical-cavity surface-emitting lasers

Author

Ortsiefer, M. ; Shau, R. ; Bohm, G. ; Zigldrum, M. ; Rosskopf, J. ; Amann, M.-C.

Author_Institution

Walter Schottky Inst., Tech. Univ. Munchen, Garching, Germany

Volume

12

Issue

11

fYear

2000

Firstpage

1435

Lastpage

1437

Abstract

Excellent lasing performance is demonstrated for a 1.83-μm InGaAlAs-InP vertical-cavity surface-emitting laser (VCSEL) utilizing the buried tunnel junction technology. Threshold currents as low as 190 μA at 20/spl deg/C and operating temperatures as high as 90/spl deg/C have been measured. These values are the best ones reported so far for long-wavelength VCSELs.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; laser beams; laser cavity resonators; laser modes; laser tuning; semiconductor lasers; surface emitting lasers; 1.83 mum; 190 muA; 20 C; 90 C; InGaAlAs-InP; VCSEL; buried tunnel junction technology; continuous-wave operation; lasing performance; long-wavelength VCSELs; operating temperatures; threshold currents; vertical-cavity surface-emitting laser; vertical-cavity surface-emitting lasers; Distributed feedback devices; Gas lasers; Laser feedback; Laser tuning; Mirrors; Optical surface waves; Semiconductor lasers; Surface emitting lasers; Temperature; Vertical cavity surface emitting lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.887640

Filename

887640