Title :
Characterising and modelling thermal behaviour of radio-frequency power LDMOS transistors
Author :
Collantes, J.M. ; Bouysse, Ph ; Quere, R.
Author_Institution :
Dept. de Electr. y Electron., Pais Vasco Univ., Bilbao, Spain
fDate :
7/9/1998 12:00:00 AM
Abstract :
The thermal behaviour of radio-frequency power LDMOS transistors is analysed. Pulsed characterisation techniques are proposed to provide a straightforward method for determining the device zero temperature coefficient point. An LDMOS technology currently used for power amplification in L-band radiotelephony applications is studied. Load-pull measurements and nonlinear simulations are used to determine the bias conditions for stable operation with temperature. Finally, a model is proposed to take into account the influence of the dissipated power on the device responses during nonlinear operation
Keywords :
UHF field effect transistors; power MOSFET; semiconductor device models; semiconductor device testing; thermal analysis; thermal stability; L-band; RF power LDMOS transistors; bias conditions; device zero temperature coefficient point; dissipated power; load-pull measurements; modelling; nonlinear operation; nonlinear simulations; pulsed characterisation techniques; radiofrequency power transistors; stable operation; thermal behaviour;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19980975
