Title :
DC and RF characteristics of 0.25 μm nonrecessed gate GaAs P-HEMT fabricated by self-aligned gate process
Author :
Yang, Sung-Gi ; Kim, Dae-Hyun ; Seo, Kwang-Seok
Author_Institution :
Dept. of Electr. Eng., Seoul Nat. Univ., South Korea
fDate :
7/9/1998 12:00:00 AM
Abstract :
A 0.25 μm non-recessed gate GaAs P-HEMT has been fabricated by using a self-aligned gate process and Pd/Ni/Ge ohmic contact. Despite the non-recessed gate structure, the device showed excellent DC and RF characteristics (average gm,max=395 mS/mm, fT=75 GHz and fmax=190 GHz) with a considerable improvement in device yield and uniformity. The RF performances of the fabricated device are comparable or even superior to those of previously reported quarter-micrometre recessed gate GaAs P-HEMTs
Keywords :
III-V semiconductors; gallium arsenide; high electron mobility transistors; 0.25 micron; DC characteristics; GaAs; Pd/Ni/Ge ohmic contact; RF characteristics; device yield; fabrication; nonrecessed gate GaAs P-HEMT; self-aligned gate process; uniformity;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19981005
