Title :
Picosecond switching due to electron tunnelling and avalanche in GaAs/AlxGa1-xAs diode
Author :
Geizutis, A. ; Krotkus, A. ; Reklaitis, A. ; Asche, M.
Author_Institution :
Semicond. Phys. Lab., Vilnius, Lithuania
fDate :
7/9/1998 12:00:00 AM
Abstract :
A new semiconductor heterostructure diode with an S-type current-voltage characteristic that can be used for high-speed voltage switching is proposed and demonstrated. This behaviour is caused by the electrons tunnelling through the potential barrier and initiating avalanche multiplication in a small energy gap base region
Keywords :
semiconductor diodes; GaAs-AlGaAs; S-type current-voltage characteristic; avalanche multiplication; electron tunnelling; high-speed voltage switching; picosecond switching; potential barrier; semiconductor heterostructure diode;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19981001
