• DocumentCode
    1411799
  • Title

    Two-dimensional analysis of carrier-blocking effect on cutoff frequency characteristics of collector-up AlGaAs/GaAs HBTs

  • Author

    Horio, K. ; Kurosawa, N.

  • Author_Institution
    Fac. of Syst. Eng., Shibaura Inst. of Technol., Tokyo, Japan
  • Volume
    34
  • Issue
    14
  • fYear
    1998
  • fDate
    7/9/1998 12:00:00 AM
  • Firstpage
    1436
  • Lastpage
    1437
  • Abstract
    Two-dimensional simulation of cutoff frequency (fτ) characteristics in collector-up AlGaAs/GaAs heterojunction bipolar transistors is performed for various collector widths and different base-electrode positions. By putting the base electrode closer to the intrinsic collector, the degradation in fτ resulting from the so-called carrier-blocking effect is shown to be suppressed
  • Keywords
    III-V semiconductors; aluminium compounds; current density; electron density; gallium arsenide; heterojunction bipolar transistors; semiconductor device models; 2D simulation; AlGaAs-GaAs; base-electrode positions; carrier-blocking effect; collector widths; collector-up HBTs; cutoff frequency characteristics; heterojunction bipolar transistors; two-dimensional analysis;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19980892
  • Filename
    706125
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1411799