Title :
Room-temperature pulsed operation of strained GaInNAs/GaAs double quantum well laser diode grown by metal organic chemical vapour deposition
Author :
Sato, S. ; Satoh, S.
Author_Institution :
Gen. Electron. Res & Dev. Center, Ricoh Co. Ltd., Miyagi, Japan
fDate :
7/23/1998 12:00:00 AM
Abstract :
A strained GaInNAs/GaAs double quantum-well laser is developed by metal organic chemical vapour deposition. Almost 1.2 μm at room-temperature under pulsed operation is demonstrated. The threshold current density is lower than that of a laser with a GaInNAs bulk active layer
Keywords :
quantum well lasers; 1.2 mum; GaInNAs-GaAs; metal organic chemical vapour deposition; room-temperature pulsed operation; strained GaInNAs/GaAs double quantum well laser diode; threshold current density;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19981034
