DocumentCode :
1412175
Title :
Enhanced Performance of Nitride-Based Blue LED With Step-Stage MQW Structure
Author :
Hsu, Hsiao-Chiu ; Su, Yan-Kuin ; Huang, Shyh-Jer ; Tseng, Chi-Yao ; Cheng, Chiao-Yang ; Chen, Kuan-Chun
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
Volume :
23
Issue :
5
fYear :
2011
fDate :
3/1/2011 12:00:00 AM
Firstpage :
287
Lastpage :
289
Abstract :
A step-stage InGaN/GaN multiquantum-well (MQW) structure can enhance the efficiency of GaN-based light-emitting diodes (LEDs). Compared to dual-stage MQW LEDs, the step-stage MQW LEDs have lower forward voltage and higher light output. The measured light output power of step-stage LEDs operating at 350 mA shows an increase of approximately 23% with an external quantum efficiency (EQE) increase of 6.6%, when compared to dual-stage LEDs.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; light emitting diodes; quantum well devices; InGaN-GaN; MQW; current 350 mA; external quantum efficiency; light-emitting diodes; multiquantum-well structure; nitride-based blue LED; Electron-injection layer (EIL); GaN-based light-emitting diodes (LEDs); multiple quantum-well (MQW); step-stage;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2010.2102348
Filename :
5675665
Link To Document :
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