Title :
Monolithic 1.3 μm resonant cavity light emitting diode grown by solid source molecular beam epitaxy
Author :
Jalonen, M. ; Kongas, J. ; Toivonen, M. ; Savolainen, P. ; Orsila, S. ; Salokatve, A. ; Pesa, M.
Author_Institution :
Dept. of Phys., Tampere Univ. of Technol., Finland
fDate :
7/23/1998 12:00:00 AM
Abstract :
A monolithic 1.3 μm resonant cavity light emitting diode grown by solid source molecular beam epitaxy is demonstrated. The diode has a 1λ thick GaInAsP optical cavity active region surrounded by GaInAsP distributed Bragg reflectors. The device exhibits strong spontaneous emission with a narrow linewidth of 13 nm. The results also clearly demonstrate the accuracy of solid source molecular beam epitaxy for the growth of complex and thick GaInAsP-based device structures
Keywords :
III-V semiconductors; aluminium compounds; cavity resonators; gallium arsenide; indium compounds; light emitting diodes; molecular beam epitaxial growth; spontaneous emission; 1.3 mum; AlGaInAsP; GaInAsP distributed Bragg reflectors; GaInAsP optical cavity active region; GaInAsP-based device structures; growth; linewidth; monolithic 1.3 μm resonant cavity light emitting diode; solid source molecular beam epitaxy; spontaneous emission;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19981011
