DocumentCode :
1412213
Title :
0.1 μm AlSb/InAs HEMTs with InAs subchannel
Author :
Boos, J.B. ; Yang, M.J. ; Bennett, B.R. ; Park, D. ; Kruppa, W. ; Yang, C.H. ; Bass, R.
Author_Institution :
Naval Res. Lab., Washington, DC, USA
Volume :
34
Issue :
15
fYear :
1998
fDate :
7/23/1998 12:00:00 AM
Firstpage :
1525
Lastpage :
1526
Abstract :
AlSb/InAs HEMTs with a 0.1 μm gate length have been fabricated with a thin InAs subchannel separated from the InAs channel by 30 Å of AlSb. As a result, these HEMTs exhibit improved charge control and a higher current-gain cutoff frequency. The devices have a microwave transconductance of 850 mS/mm and an fT of 180 GHz at VDS=0.6 V. After subtracting the gate bonding pad capacitance, an fT of 250 GHz was obtained
Keywords :
III-V semiconductors; aluminium compounds; high electron mobility transistors; indium compounds; millimetre wave field effect transistors; 0.1 micron; 180 GHz; 250 GHz; 850 mS/mm; AlSb-InAs; EHF; HEMTs; InAs subchannel; charge control; current-gain cutoff frequency; microwave transconductance;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19981064
Filename :
706267
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1412213
بازگشت