• DocumentCode
    1412213
  • Title

    0.1 μm AlSb/InAs HEMTs with InAs subchannel

  • Author

    Boos, J.B. ; Yang, M.J. ; Bennett, B.R. ; Park, D. ; Kruppa, W. ; Yang, C.H. ; Bass, R.

  • Author_Institution
    Naval Res. Lab., Washington, DC, USA
  • Volume
    34
  • Issue
    15
  • fYear
    1998
  • fDate
    7/23/1998 12:00:00 AM
  • Firstpage
    1525
  • Lastpage
    1526
  • Abstract
    AlSb/InAs HEMTs with a 0.1 μm gate length have been fabricated with a thin InAs subchannel separated from the InAs channel by 30 Å of AlSb. As a result, these HEMTs exhibit improved charge control and a higher current-gain cutoff frequency. The devices have a microwave transconductance of 850 mS/mm and an fT of 180 GHz at VDS=0.6 V. After subtracting the gate bonding pad capacitance, an fT of 250 GHz was obtained
  • Keywords
    III-V semiconductors; aluminium compounds; high electron mobility transistors; indium compounds; millimetre wave field effect transistors; 0.1 micron; 180 GHz; 250 GHz; 850 mS/mm; AlSb-InAs; EHF; HEMTs; InAs subchannel; charge control; current-gain cutoff frequency; microwave transconductance;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19981064
  • Filename
    706267
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1412213