Title :
Mathematical basis for describing crucial technical shortcoming of split C-V technique in thin SOI MOSFETs
Author_Institution :
Fac. of Eng., Kansai Univ., Osaka, Japan
fDate :
7/23/1998 12:00:00 AM
Abstract :
The authors discuss the conventional split C-V technique used in bulk MOSFETs and show mathematically that it is not always suitable for fully-depleted SOI MOSFETs
Keywords :
MOSFET; semiconductor device testing; silicon-on-insulator; thin film transistors; Si; bulk MOSFETs; fully-depleted devices; split C-V technique; thin SOI MOSFETs;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19981060
