• DocumentCode
    1412326
  • Title

    Preferred crystal orientation of NiFe underlayers and its effect on magnetostriction of Co/Cu/Co thin films

  • Author

    Yeh, T. ; Sivertsen, J.M. ; Lin, C.L.

  • Author_Institution
    Solid State Electron. Center, Honeywell Inc., Plymouth, MN, USA
  • Volume
    34
  • Issue
    4
  • fYear
    1998
  • fDate
    7/1/1998 12:00:00 AM
  • Firstpage
    870
  • Lastpage
    872
  • Abstract
    The saturation magnetostriction of sputtered Co/Cu/Co thin films affected by preferred crystal orientation distribution of NiFe underlayers has been investigated. The experimental results indicated that preferred crystal orientation of NiFe underlayers plays a significant role in affecting the magnetoelastic behavior of coupled Co films separated by a thin Cu film. Negative value of saturation magnetostriction (-4.9×10-6) was obtained on sample film deposited on the NiFe underlayer with a more random crystal orientation distribution, while positive value of saturation magnetostriction (+11.6×10-6) was found on sample film deposited on highly [111] oriented NiFe film. It is clear that the preferred crystal orientation distribution of NiFe underlayers has a marked effect on the saturation magnetostriction of Co/Cu/Co films that λs is very sensitive to film structure and crystalline orientation texture
  • Keywords
    cobalt; copper; crystal orientation; iron alloys; magnetic multilayers; magnetic thin films; magnetoelastic effects; magnetostriction; nickel alloys; sputtered coatings; texture; Co-Cu-Co; Co/Cu/Co thin films; NiFe; NiFe underlayers; crystalline orientation texture; film structure; magnetoelastic behavior; preferred crystal orientation; saturation magnetostriction; sputtered films; Crystallization; Magnetic anisotropy; Magnetic films; Magnetic multilayers; Magnetic separation; Magnetostriction; Perpendicular magnetic anisotropy; Residual stresses; Saturation magnetization; Sputtering;
  • fLanguage
    English
  • Journal_Title
    Magnetics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9464
  • Type

    jour

  • DOI
    10.1109/20.706295
  • Filename
    706295