Parametric action in transistors: Theory

Both the emitter-base and collector-base diodes of transistors incorporate nonlinear capacitance and conductance. In this paper it is shown that the effect of the parametric mixing action resulting from the pumping of the emitter capacitance is, in general, much less than that due to the pumping of the collector capacitance, since the former is shunted by a comparatively large conductance.