DocumentCode
1412738
Title
The effect of end and edge shape on the performance of pseudo-spin valve memories
Author
Gadbois, J. ; Zhu, J.G. ; Vavra, W. ; Hurst, A.
Author_Institution
Minnesota Univ., Minneapolis, MN, USA
Volume
34
Issue
4
fYear
1998
fDate
7/1/1998 12:00:00 AM
Firstpage
1066
Lastpage
1068
Abstract
Three Giant Magnetoresistive Random Access Memories (GMRAM) using different device shapes have been simulated. Tapered bits were found to provide the lowest switching thresholds while maintaining bit stability. The effect of edge roughness was also investigated. Bits with more edge roughness were found to have lower switching fields but also have limited output signals
Keywords
giant magnetoresistance; magnetoresistive devices; random-access storage; Giant Magnetoresistive Random Access Memories; edge roughness; edge shape; end shape; limited output signals; lower switching fields; pseudo-spin valve memories; Anisotropic magnetoresistance; Conducting materials; Crystallization; Giant magnetoresistance; Magnetic anisotropy; Magnetic materials; Magnetization; Shape; Soft magnetic materials; Valves;
fLanguage
English
Journal_Title
Magnetics, IEEE Transactions on
Publisher
ieee
ISSN
0018-9464
Type
jour
DOI
10.1109/20.706358
Filename
706358
Link To Document