Memory element based on a layered galvanomagnetic structure

The memory element based on the interaction between magnetic film having perpendicular anisotropy and a Hall element is considered. The magnetic film of high coercivity with perpendicular anisotropy is used for data recording and storage, and the semiconductor film with Hall effect-for data reading. The insulating layer is the electric isolation between semiconductor and magnetic films. A kinetic model of the memory element is proposed. The dependencies of the effect of electric-physical parameters of the structure on the values of the Hall potential are determined