• DocumentCode
    1412975
  • Title

    On the Choice of High- \\kappa Dielectrics for Metal Nanocrystal Memory to Improve Data Retention

  • Author

    Pavel, Akeed A. ; Islam, Naz

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Univ. of Missouri, Columbia, MO, USA
  • Volume
    9
  • Issue
    3
  • fYear
    2010
  • fDate
    5/1/2010 12:00:00 AM
  • Firstpage
    345
  • Lastpage
    347
  • Abstract
    An investigation on the optimized choice of high-κ gate dielectrics and metal nanocrystals (NCs) for improving retention capability of a flash memory is presented. The influence of charge neutrality level (CNL) of gate dielectrics on retention time is quantified. Results show that retention efficacy of metal NCs with high work function (WF) is adversely affected when embedded in certain oxides with high CNLs. This unravels that both the CNL and WF must be tuned together to maximize the retention period.
  • Keywords
    flash memories; high-k dielectric thin films; work function; charge neutrality level; data retention; flash memory; high-?? gate dielectrics; metal nanocrystal memory; work function; Charge neutrality level (CNL); high-$kappa$ dielectric; metal nanocrystal (NC) memory;
  • fLanguage
    English
  • Journal_Title
    Nanotechnology, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1536-125X
  • Type

    jour

  • DOI
    10.1109/TNANO.2010.2041934
  • Filename
    5409575
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1412975