Title :
On-wafer facet processing for low cost optoelectronic components [semiconductor lasers]
Author_Institution :
Hewlett Packard Ltd., Ipswich, UK
fDate :
7/31/1997 12:00:00 AM
Abstract :
Strained multiquantum well InP-InGaAsP buried heterostructure lasers were prepared using a novel etched facet/on-wafer facet coating process. Facet trenches were etched using a methane/hydrogen based RIE process. The dielectric and metal layers conventionally used for passivation and electrical contact in a standard laser structure were also used as AR and HR coatings in these devices. DFB laser devices showed lasing thresholds of 8 mA and a front-back power ratio of 10:1 for devices with etched and AR/HR coated facets
Keywords :
III-V semiconductors; antireflection coatings; chemical vapour deposition; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; optical communication equipment; optical fabrication; quantum well lasers; sputter etching; 8 mA; AR coatings; DFB laser devices; HR coatings; InGaAsP; InP; InP-InGaAsP; buried heterostructure lasers; coating process; low cost optoelectronic components; methane/H2 based RIE process; multiquantum well lasers; onwafer facet processing; reactive ion etching; strained MQW BH lasers; trench etching;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19970953
