Title :
High transconductance AlGaN/GaN heterostructure field effect transistors on SiC substrates
Author :
Chen, Qian ; Yang, J.W. ; Adesida, I.
Author_Institution :
APA Opt. Inc., Blaine, MN
fDate :
7/31/1997 12:00:00 AM
Abstract :
Heterostructure field effect transistors have been fabricated using AlGaN/GaN heterostructures grown on n-type SiC substrates. These 0.25 μm-gate devices exhibited a high drain current and DC transconductance of 1.71 A/mm and 222 mS/mm, respectively. In sharp contrast to the high current density HFETs fabricated on sapphire substrates was the absence of the negative differential resistance in the drain characteristics. A drain-to-gate breakdown voltage of 39 V was also obtained
Keywords :
III-V semiconductors; aluminium compounds; electric breakdown; gallium compounds; power field effect transistors; silicon compounds; substrates; 0.25 micron; 222 mS/mm; 39 V; AlGaN-GaN-SiC; HFETs; SiC; drain characteristics; drain-to-gate breakdown voltage; field effect transistors; heterostructure FET; high transconductance; n-type SiC substrates;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19970933
