Title :
Modelling the threshold voltage of deep-submicrometer fully depleted SOI MOSFETs
Author :
Wang, Hongmei ; Xi, Xuemei ; Zhang, Xing ; Wang, Yangyuan
Author_Institution :
Inst. of Microelectron., Beijing Univ., China
fDate :
7/31/1997 12:00:00 AM
Abstract :
A new analytical model is presented for the threshold voltage of fully depleted silicon-on-insulator MOSFETs with effective channel lengths down to the deep-submicrometer range. The model is based on the analytical solution for two-dimensional potential distribution in the silicon film and in the buried oxide. Good agreement is obtained between the results of the model and the PISCES simulation. It is also simple in functional form and hence is computationally efficient
Keywords :
MOSFET; semiconductor device models; silicon-on-insulator; 2D potential distribution; Si; Si film; analytical model; buried oxide; deep-submicron MOSFET; effective channel lengths; fully depleted SOI MOSFETs; threshold voltage modelling;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19970936
