• DocumentCode
    1414054
  • Title

    Catastrophic Failure in Highly Scaled Commercial NAND Flash Memories

  • Author

    Irom, Farokh ; Nguyen, Duc N. ; Bagatin, Marta ; Cellere, Giorgio ; Gerardin, Simone ; Paccagnella, Alessandro

  • Author_Institution
    Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
  • Volume
    57
  • Issue
    1
  • fYear
    2010
  • Firstpage
    266
  • Lastpage
    271
  • Abstract
    Heavy ion single-event measurements on a variety of high density commercial NAND flash memories are reported. Three single event effect (SEE) phenomena were investigated: single effect upsets (SEUs), single effect functional interrupts (SEFIs), and a new high current phenomenon which at high LETs results in catastrophic loss of ability to erase and program the device.
  • Keywords
    flash memories; NAND flash memories; heavy ion single-event measurements; high current phenomenon; single effect functional interrupts; single effect upsets; single event effect; Circuits; Flash memory; Laboratories; Logic arrays; Logic devices; NASA; Nonvolatile memory; Propulsion; Single event upset; Space technology; Catastrophic; destructive; dielectric gate rupture; micro-dose; nonvolatile memory; single event;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2009.2035315
  • Filename
    5410018
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1414054