A novel self-alignment technique for GaAs MESFET with asymmetric n + layer

A novel self-alignment technique for GaAs MESFETs with asymmetric n⁺ layer has been developed. It is based on selective ion implantation whereby the doping profile can be optimized independently for source and drain regions. The technique has been used to realize a deep and heavily doped source, to ensure low source resistance, and a shallow and lightly doped drain was used to suppress the short-channel effect. The asymmetric implantation self-alignment technique (ASIST) used and the device characteristics are reported