• DocumentCode
    1414142
  • Title

    Development of Embedded STT-MRAM for Mobile System-on-Chips

  • Author

    Lee, Kangho ; Kang, Seung H.

  • Author_Institution
    Adv. Technol., Qualcomm Incoporated, San Diego, CA, USA
  • Volume
    47
  • Issue
    1
  • fYear
    2011
  • Firstpage
    131
  • Lastpage
    136
  • Abstract
    Spin-transfer-torque magnetoresistive random access memory (STT-MRAM) has been considered a promising technology for future mobile system-on-chip memories due to negligible static leakage power, high-speed read/write operations, and unlimited read/write endurance. In this paper, we address key challenges and recent advances for enabling embedded STT-MRAM on a deeply scaled CMOS logic platform.
  • Keywords
    CMOS memory circuits; MRAM devices; magnetic tunnelling; system-on-chip; deeply scaled CMOS logic platform; embedded STT-MRAM; high-speed read-write operations; mobile system-on-chip memories; mobile system-on-chips; spin-transfer-torque magnetoresistive random access memory; static leakage power; unlimited read-write endurance; Anisotropic magnetoresistance; Magnetic tunneling; Random access memory; Switches; System-on-a-chip; Temperature; Temperature measurement; CMOS integration; MTJ model; magnetic tunnel junctions; switching current; thermal stability;
  • fLanguage
    English
  • Journal_Title
    Magnetics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9464
  • Type

    jour

  • DOI
    10.1109/TMAG.2010.2075920
  • Filename
    5676454
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1414142