Title :
Power amplifier/low noise amplifier RF switch
Author :
Lee, Tze Kiu ; Chan, Wing Shing ; Siu, T.Y.M.
Author_Institution :
Dept. of Electron. Eng., City Univ. of Hong Kong, Kowloon, China
fDate :
11/23/2000 12:00:00 AM
Abstract :
Front-end RF switches commonly use PIN diodes as the switching element. A novel RF switch using the existing front-end power amplifier and low noise amplifier to give better performance with reduced component count and lower cost is demonstrated
Keywords :
UHF power amplifiers; mobile radio; radio equipment; radiofrequency amplifiers; semiconductor switches; cost reduction; duplexer; front-end RF switches; front-end power amplifier; low noise amplifier; power amplifier/LNA RF switch;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20001404
