Title :
Dramatic reduction of sidegating in MODFETs
Author :
Lin, Barry J. F. ; Mars, D.E. ; Low, Thomas S.
Author_Institution :
Hewlett-Packard Lab., Palo Alto, CA
fDate :
12/1/1988 12:00:00 AM
Abstract :
The results of systematic materials and process modifications to implant-isolated MODFETs, aimed at the elimination of sidegating in MODFET ICs, are reported. Two different methods of ion-implant isolation and four different kinds of MBE buffer layer were studied. It was found that the sidegating is independent of the implantation type but depends on the type of buffer layer. MODFETs fabricated with a low-temperature buffer layer exhibited excellent sidegating characteristics and maintained less than 0.2% reduction in the MODFET channel current up to a sidegating voltage of -70 V at a distance of 3 μm
Keywords :
high electron mobility transistors; ion implantation; molecular beam epitaxial growth; semiconductor technology; -70 V; 3 micron; HEMT; MODFET ICs; channel current; elimination of sidegating; implant-isolated MODFETs; ion-implant isolation; kinds of MBE buffer layer; low-temperature buffer layer; sidegating characteristics; sidegating voltage; Buffer layers; Etching; FETs; Gallium arsenide; HEMTs; Implants; Leakage current; MESFETs; MODFETs; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
