Title :
Improved catastrophic optical mirror damage level in InGaAs/AlGaAs laser diodes
Author :
Livshits, D.A. ; Kochnev, I.V. ; Lantratov, V.M. ; Ledentsov, N.N. ; Nalyot, T.A. ; Tarasov, I.S. ; Alferov, Zh.I.
Author_Institution :
A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg, Russia
fDate :
10/26/2000 12:00:00 AM
Abstract :
9.2 W continuous wave (CW) optical power at a heatsink temperature 10°C and 12.2 W in a regime with stabilised temperature of the laser chip is demonstrated from a 100 μm aperture InGaAs/AlGaAs (λ=1.03 μm) laser diode with 0.4 μm wide GaAs waveguide. Thus, record-high optical power densities of 30 MW/cm2 and 40 MW/cm2 correspondingly are achieved at the front facet without catastrophic optical mirror damage (COMD)
Keywords :
MOCVD; aluminium compounds; gallium arsenide; indium compounds; laser beams; laser mirrors; optical fabrication; ridge waveguides; semiconductor lasers; waveguide lasers; 0.4 mum; 1.03 mum; 10 C; 100 mum; 12.2 W; 9.2 W; CW optical power; GaAs waveguide; InGaAs-AlGaAs; InGaAs/AlGaAs; InGaAs/AlGaAs laser diodes; catastrophic optical mirror damage; continuous wave optical power; front facet; heatsink temperature; improved catastrophic optical mirror damage level; laser chip; laser diode; record-high optical power densities; stabilised temperature;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20001332
