• DocumentCode
    1414705
  • Title

    Long wavelength InGaAs-InGaAlAs-InP diode lasers grown by solid-source molecular-beam epitaxy

  • Author

    Kuang, G.K. ; Böhm, G. ; Graf, N. ; Grau, M. ; Rösel, G. ; Meyer, R. ; Amann, M.-C.

  • Author_Institution
    Walter Schottky Inst., Tech. Univ. of Munich, Germany
  • Volume
    36
  • Issue
    22
  • fYear
    2000
  • fDate
    10/26/2000 12:00:00 AM
  • Firstpage
    1849
  • Lastpage
    1851
  • Abstract
    The authors have fabricated InGaAs-InGaAlAs-InP strained quantum well lasers with wavelengths as long as 2208 nm using solid-source molecular-beam epitaxy. A continuous-wave threshold current density of 370 A/cm2 at 20°C and characteristic temperature of 53 K have been achieved
  • Keywords
    Debye temperature; III-V semiconductors; aluminium compounds; current density; gallium arsenide; indium compounds; laser beams; molecular beam epitaxial growth; optical fabrication; quantum well lasers; 20 C; 2208 nm; 53 K; InGaAs-InGaAlAs-InP; InGaAs-lnGaAlAs-lnP diode lasers; characteristic temperature; continuous-wave threshold current density; diode lasers; fabrication; long wavelength diode lasers; solid-source molecular-beam epitaxy; strained quantum well lase; strained quantum well lasers; threshold current density; wavelengths;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20001328
  • Filename
    888427
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1414705