DocumentCode
1414753
Title
Evaluation on Protective Single Event Burnout Test Method for Power DMOSFETs
Author
Liu, Sandra ; Marec, Ronan ; Sherman, Phillip ; Titus, Jeffrey L. ; Bezerra, Francoise ; Ferlet-Cavois, Véronique ; Marin, Marc ; Sukhaseum, Nicolas ; Widmer, Fabien ; Muschitiello, Michele ; Gouyet, Lionel ; Ecoffet, Robert ; Zafrani, Max
Author_Institution
International Rectifier Corp., El Segundo, CA, USA
Volume
59
Issue
4
fYear
2012
Firstpage
1125
Lastpage
1129
Abstract
This paper evaluates protective single event burnout test method on power DMOSFETs to confirm that it provides accurate test results as the destructive test method when performed properly. The selection of resistor values, protective mechanism, and considerations in calculating SEB cross-section are discussed.
Keywords
Power MOSFET; Resistors; Silver; Threshold voltage; Transient analysis; Xenon; Non-destructive; power MOSFET; single event burnout; test method;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.2011.2177863
Filename
6122472
Link To Document