Title :
High-performance back-illuminated solar-blind AlGaN metal-semiconductor-metal photodetectors
Author :
Yang, B. ; Lambert, D.J.H. ; Li, T. ; Collins, C.J. ; Wong, M.M. ; Chowdhury, U. ; Dupuis, R.D. ; Campbell, J.C.
Author_Institution :
Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA
fDate :
10/26/2000 12:00:00 AM
Abstract :
The fabrication and characterisation of back-illuminated solar blind AlGaN metal-semiconductor-metal photodetectors is reported. The dark current of 40×40 μm devices is lower than the instrument measurement limitation of 20 fA for a bias <100 V. The external quantum efficiency is as high as 48% and the spectral response shows a sharp band edge drop-off at ~280 nm
Keywords :
III-V semiconductors; aluminium compounds; dark conductivity; gallium compounds; metal-semiconductor-metal structures; optical fabrication; photodetectors; 100 V; 20 fA; 40 mum; AlGaN; AlGaN high-performance back-illuminated solar-blind MSM photodetectors; dark current; external quantum efficiency; instrument measurement limitation; optical fabrication; sharp band edge drop-off; spectral response;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20001301
