The Effect of the Photo-Induced Carriers on the Reliability of Oxide TFTs Under Various Intensities of Light

Author

Lee, Soo-Yeon ; Kim, Sun-Jae ; Lee, YoungWook ; Lee, Woo-Geun ; Yoon, Kap-Soo ; Kwon, Jang-Yeon ; Han, Min-Koo

Author_Institution

Sch. of Electr. Eng., Seoul Nat. Univ., Seoul, South Korea

Volume

33

Issue

2

fYear

2012

Firstpage

218

Lastpage

220

Abstract

We investigated the reliability of oxide TFTs under negative gate bias stress combined with various intensities of light having a wavelength of 400 nm. Light illumination caused a considerable V_th shift toward negative direction, as reported in previous works. However, the trapping probability of a single hole is not altered, which means that the basic mechanism of the charge trapping is not changed by light illumination. In oxide TFTs, the hole concentration at the channel and the characteristics of the gate insulator materials are the determinant factors of the reliability under light illumination.

Keywords

circuit reliability; lighting; statistical distributions; thin film transistors; determinant factor; gate insulator material; hole concentration; light illumination; light intensity; negative gate bias stress; oxide TFT reliability; photo-induced carrier; single hole; trapping probability; Charge carrier processes; Insulators; Logic gates; Stress; Thin film transistors; Tunneling; Light illumination; oxide thin-film transistors (TFTs); reliability;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2011.2177633

Filename

6122487