DocumentCode :
1414894
Title :
Low-frequency noise in AlSb/InAs HEMTs
Author :
Kruppa, W. ; Boos, J.B. ; Bennett, B.R. ; Yang, M.J.
Author_Institution :
Naval Res. Lab., Washington, DC, USA
Volume :
36
Issue :
22
fYear :
2000
fDate :
10/26/2000 12:00:00 AM
Firstpage :
1888
Lastpage :
1889
Abstract :
Measurements of the low-frequency noise in several types of AlSb/InAs HEMTs are reported. The slope of the noise level with frequency is close to ideal 1/f for some types, while others have significant generation-recombination components. The Hooge parameter, αH, for all the devices is in the range between 10-3 and 10-2 based on floating-gate measurements at low drain voltage
Keywords :
1/f noise; III-V semiconductors; aluminium compounds; electron-hole recombination; high electron mobility transistors; indium compounds; semiconductor device measurement; semiconductor device noise; 1/f noise; AlSb-InAs; AlSb/InAs HEMTs; Hooge parameter; floating-gate measurement; generation-recombination component; low drain voltage; low-frequency noise; noise level;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:20001322
Filename :
888455
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1414894
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