Abstract :
A new approach to combining GaN and CMOS devices on silicon takes us a step closer to low cost high-performance system-on-one chips. The first monolithically-grown chips that combine gallium nitride and CMOS devices on a silicon substrate have been demonstrated by collaborating researchers at the National Research Council of Canada and Carleton University. The team partnered with the world expert in GaN growth on silicon substrates, Fabrice Semond from CNRS-CHREA in France, to integrate AIGaN/GaN HFETs with silicon MOSFETs on a silicon substrate using a technique that can be easily scaled up for mass production.
Keywords :
CMOS integrated circuits; MOSFET; system-on-chip; CMOS devices; GaN growth; complementary metal-oxide-semiconductor; gallium nitride; mass production; metal-oxide-semiconductor field effect transistors; monolithically-grown chips; silicon MOSFET; silicon block; silicon substrates; system-on-one chips;
