Title :
Investigation of single surface acoustic wave sources
Author :
Hesjedal, T. ; Behme, G.
Author_Institution :
Dept. of Electr. Eng., Stanford Univ., CA, USA
fDate :
10/26/2000 12:00:00 AM
Abstract :
The first experimental investigation of a single gap surface acoustic wave (SAW) source on GaAs is reported. Using scanning acoustic force microscopy, SAWs are measured with subwavelength resolution and an unmatched sensitivity. Phase and amplitude images reveal the radiation characteristics of a single gap source, allowing for a deeper insight into SAW device operation and future design improvements
Keywords :
III-V semiconductors; acoustic microscopy; acoustic wave production; atomic force microscopy; gallium arsenide; surface acoustic wave devices; surface acoustic waves; GaAs; SAW device operation; SAW source; SAWs; amplitude images; design improvements; phase images; radiation characteristics; scanning acoustic force microscopy; single gap surface acoustic wave source; single surface acoustic wave sources; subwavelength resolution;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20001311
