DocumentCode
1415005
Title
Complementation SCR for RF IC ESD protection
Author
Dong, Shuai ; Li, Meng ; Guo, Wenyong ; Han, Yi ; Huang, Dijiang ; Song, Bo
Author_Institution
Dept. of ISEE, Zhejiang Univ., Hangzhou, China
Volume
46
Issue
3
fYear
2010
Firstpage
213
Lastpage
214
Abstract
Complementation silicon controlled rectifiers (CSCRs) with various novel layouts are designed in 0.18 ??m RF CMOS process, including general CSCR, strip CSCR (SCSCR), island-strip CSCR (ISCSCR) and island-block CSCR (IBCSCR). SCSCR has highest FOM; however, the ISCSCR has lowest parasitic capacitance. Appropriate division layout of the CSCRs should be addressed to achieve a balance between active area capacitance and edge capacitance.
Keywords
CMOS integrated circuits; electrostatic discharge; integrated circuit layout; radiofrequency integrated circuits; rectifiers; silicon; FOM; RF CMOS process; RF IC ESD protection; active area capacitance; division layout; edge capacitance; island-block complementation silicon controlled rectifiers; island-strip complementation silicon controlled rectifiers; novel layouts; size 0.18 mum;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el.2010.2567
Filename
5410658
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