Title :
Monolithic integration of AlGaN/GaN HFET with MOS on silicon (111) substrates
Author :
Chyurlia, P.N. ; Semond, F. ; Lester, T. ; Bardwell, J.A. ; Rolfe, S. ; Tang, Hongying ; Tarr, N.G.
Author_Institution :
Dept. of Electron., Carleton Univ., Ottawa, ON, Canada
Abstract :
AlGaN/GaN HFETs and silicon MOSFETs have been integrated monolithically on a silicon (111) substrate. A differential heteroepitaxy technique was used to grow AlGaN/GaN HFET layers on silicon (111) substrates while leaving protected areas of atomically smooth silicon in which MOSFETs are built.
Keywords :
III-V semiconductors; MOSFET; aluminium compounds; gallium compounds; high electron mobility transistors; semiconductor growth; substrates; wide band gap semiconductors; AlGaN-GaN; HFET; MOS; differential heteroepitaxy technique; monolithic integration; silicon substrates;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2010.3167
