Title :
Monolithically integrated low-power phototransceiver incorporating InGaAs/GaAs quantum-dot microcavity LED and modulated barrier photodiode
Author :
Qasaimeh, O. ; Zhou, W.D. ; Bhattacharya, P. ; Huffaker, D. ; Deppe, D.G.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
fDate :
11/9/2000 12:00:00 AM
Abstract :
A low-power monolithically integrated phototransceiver, consisting of a high-sensitivity modulated barrier photodiode and a In0.4Ga0.6As/GaAs self-organised quantum-dot microcavity light-emitting diode, is demonstrated. The modulated barrier photodiode exhibits a responsivity of 1.8×103 A/W, for 630 nm excitation, at an input power of 10 nW. The output wavelength is 980 nm. The phototransceiver exhibits an optical gain of 18 dB and power dissipation of 110 μW for an input power of 10 nW
Keywords :
III-V semiconductors; cavity resonators; gallium arsenide; indium compounds; integrated optics; light emitting diodes; optical fabrication; optical modulation; optical receivers; optical resonators; optical transmitters; photodiodes; quantum well devices; semiconductor quantum dots; transceivers; 10 nW; 118 muW; 18 dB; 630 nm; 980 nm; In0.4Ga0.6As-GaAs; In0.4Ga0.6As/GaAs; In0.4Ga0.6As/GaAs self-organised quantum-dot microcavity light-emitting diode; InGaAs/GaAs quantum-dot microcavity LED; excitation; high-sensitivity modulated barrier photodiode; input power; light-emitting diode; modulated barrier photodiode; monolithically integrated low-power phototransceiver; monolithically integrated phototransceiver; optical gain; output wavelength; phototransceiver; power dissipation; quantum-dot microcavity light-emitting diode; responsivity; self-organised quantum-dot microcavity light-emitting diode;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20001352
