Title :
Direct extraction of LDMOS small signal parameters from off-state measurements
Author :
Gaddi, R. ; Tasker, P.J. ; Pla, J.A.
Author_Institution :
Cardiff Univ., UK
Abstract :
A small signal parameter extraction procedure is presented suitable for power LDMOSFET devices for radio frequency applications. Small signal measurements on the nonconducting device. i.e. biased in off-state, are manipulated analytically in one single extraction step. The parasitic series resistances and inductances and the device intrinsic capacitances at varying biasing voltages are obtained.
Keywords :
capacitance; electrical resistivity; inductance; power MOSFET; semiconductor device measurement; semiconductor device models; LDMOS small signal parameters; bias; biasing voltage; device intrinsic capacitances; inductance; nonconducting device; off-state; off-state measurements; parasitic series resistance; power LDMOSFET devices; radio frequency applications; single extraction step; small signal measurements; small signal parameter extraction procedure;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20001345
